The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Solid-state device technologies, which are available to the amplifier designer, fall, broadly, into three categories: bipolar junction transistors (BJTs) and junction diodes; junction field effect ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

Last week, it was announced that Cambridge GaN Devices (CGD) will lead a €10.3m European project (‘GaNext’) to develop fast-switching intelligent GaN power modules. But who is this small UK company ...

The digital age has resulted in a succession of smaller, cleaner and less power-hungry technologies since the days the personal computer fit atop a desk, replacing mainframe models that once filled ...

Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...