Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025. The new ...

TL;DR: Samsung plans to launch its 10th Gen V-NAND in 2026, featuring a 400-layer configuration using Bonding Vertical (BV) NAND technology for higher data storage, performance, and reliability. This ...

Samsung Electronics, a global leader in memory technology, has once again pushed the boundaries of innovation with the introduction of its 9th-generation vertical NAND (V-NAND) technology. This ...

Why it matters: Samsung's V-NAND technology has advanced significantly, growing from 24 layers to nearly 300 layers in just over a decade. Although the company has faced significant challenges in ...

Samsung's announcement concerns the mass production of its 1-terabit (Tb) triple-level cell (TLC) 9th-Gen vertical NAND (V-NAND), which the South Korean giant says solidifies its leadership in the ...

Samsung finds itself in a braggadocios mood over the continued development of its vertical NAND flash memory chips, and in a blog post spanning nearly 1,400 words, the company talked about what makes ...

Something to look forward to: Samsung is now preparing to begin mass production of their upcoming 8th generation V-NAND memory, which is expected to be found on future SSDs, including upcoming PCIe ...