Bipolar high-voltage devices based on silicon carbide (SiC) have been earmarked as the next big step in the development of more efficient power systems. The efficiency of these devices is largely ...

Due to the size-dependent quantum confinement effects, quantum dots (QDs) exhibit excitonic properties with tunable absorption and emission properties for modern photonics. Efficient single photon and ...

Defects often limit the performance of devices such as light-emitting diodes (LEDs). The mechanisms by which defects annihilate charge carriers are well understood in materials that emit light at red ...

For years, engineers have sought better ways to build tiny, efficient lasers that can be integrated directly onto silicon chips, a key step toward faster, more capable optical communications and ...

The review discusses transient electroluminescence (TrEL) as a tool for analyzing carrier dynamics and efficiency roll-off in perovskite light-emitting diodes.

High-voltage and high-power devices are critical for more efficient and sustainable high-power operations. One candidate for such next-generation devices is bipolar silicon carbide (SiC). SiC devices ...